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| MP7003 TOSHIBA Power Module MP7003 1. Maximum Ratings (Ta = 25C) Diode Characteristics Repetitive peak reverse voltage Peak one cycle surge forward current (D1, D2, D3, D4) (50 Hz, non-repetitive) Forward current Junction temperature Storage temperature range Symbol VRRM IFSM IF Tj Tstg Rating 600 220 25 150 -40~125 Unit V A A C C IGBT Characteristics Collector-emitter voltage Gate-emitter voltage DC Collector current 1 ms Collector power dissipation (Tc = 25C) Junction temperature Storage temperature range Symbol VCES VGES IC ICP PC Tj Tstg Rating 600 20 40 80 37 150 -40~125 Unit V V A A W C C All system Characteristics Isolation voltage Symbol VISO Condition AC 1 minute Rating 2500 Unit V 000707EAA1 * TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the "Handling Guide for Semiconductor Devices," or "TOSHIBA Semiconductor Reliability Handbook" etc.. * The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury ("Unintended Usage"). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this document shall be made at the customer's own risk. * The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA CORPORATION for any infringements of intellectual property or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any intellectual property or other rights of TOSHIBA CORPORATION or others. * The information contained herein is subject to change without notice. 2000-12-22 1/7 MP7003 2. Electrical Characteristics (Ta = 25C) Diode Characteristics Peak forward voltage (1) Peak forward voltage (2) Repetitive peak reverse Current Peak reverse current (D1, D2, D3, D4) Thermal resistance Symbol VFM (1) VFM (2) IRRM Irr Rth (j-c) Test Condition IF = 12.5 A IF = 30 A VRRM = 600 V IF = 30 A 3/4 3/4 3/4 Min 3/4 3/4 Typ. 1.0 1.20 Max 1.2 1.55 10 100 3.5 Unit V V mA A C/W IGBT Characteristics Gate leakage current Collector cut-off current Gate-emitter cut-off voltage Collector-emitter saturation voltage Input capacitance Rise time Turn-on time Switching time Fall time Turn-off Time Thermal Resistance Symbol IGES ICES VGE (OFF) VCE (sat) Cies tr ton tf toff Rth (j-c) Test Condition VGE = 20 V, VCE = 0 VCE = 600 V, VGE = 0 IC = 40 mA, VCE = 5 V IC = 40 A, VGE = 15 V VCE = 10 V, VGE = 0, f = 1 MHz Load resistance VCC = 300 V, IC = 40 A VGE = 15 V, (RG = 56 W) (Note) Min 3/4 3/4 3.0 3/4 3/4 3/4 3/4 3/4 3/4 3/4 Typ. 3/4 3/4 3/4 1.9 2900 0.4 0.7 0.3 0.7 3/4 Max 500 1.0 6.0 2.7 3/4 3/4 3/4 0.42 3/4 3.3 C/W ms Unit nA mA V V pF 3. Mechanical Rating Characteristics Min 3/4 Typ. 3/4 Max 1.5 Unit Nm Fastening torque Note: Switching time test circuit & timing chart Load Resistance Test Circuit 15 V RG = 56 W 7.5 W Waveform 90% VGE VCC = 300 V 10% 0 0 C = 680 mF 90% IC 0 10% tr ton 90% 50 ms -15 V 10% tf toff 2000-12-22 2/7 MP7003 4. Package Dimension 5. Image of Chips Mounting 2000-12-22 3/7 MP7003 6. PSC Equivalent Circuit Diagram (including application circuit) + 1 PSC D1 ~ 4 D6 ~ D7 2 D2 D4 D8 IGBT + D3 D5 - 3 A 5 E 7 G 8 From MCU 7. Pin Assignment 1. 2. 3. 4. 5. 6. 7. 8. + pin ~ pin - pin ~ pin A pin C pin (TOSHIBA test pin) E pin G pin 2000-12-22 4/7 MP7003 IF - VF 100 Common cathode 30 100 IC - VCE Common emitter 15 Tc = 25C 10 18 60 8 80 (A) 125 10 Forward current IF 3 Tc = 25C Collector current IC (A) 7 40 1 0.3 20 VGE = 6 V 0.1 0 0 0.4 0.8 1.2 1.6 2 0 1 2 3 4 5 Forward voltage VF (V) Collector-emitter voltage VCE (V) VCE - VGE 16 16 Common emitter Tc = -40C 12 80 8 IC = 20 A 40 VCE - VGE Common emitter Tc = 25C 12 (V) VCE Collector-emitter voltage Collector-emitter voltage VCE (V) 80 8 IC = 20 A 40 4 4 0 0 4 8 12 16 20 0 0 4 8 12 16 20 Gate-emitter voltage VGE (V) Gate-emitter voltage VGE (V) VCE - VGE 16 100 Common emitter Tc = 125C 12 80 Common emitter VCE = 5 V IC - VGE (V) VCE Collector-emitter voltage IC 80 8 40 IC = 20 A 4 (A) Collector current 60 40 125 20 25 Tc = -40C 0 0 0 4 8 12 16 20 0 2 4 6 8 10 Gate-emitter voltage VGE (V) Gate-emitter voltage VGE (V) 2000-12-22 5/7 MP7003 VCE, VGE - QG 10000 400 Common emitter RL = 75 W Tc = 25C 16 C - VCE (V) VCE (V) 3000 Cies (pF) Capacitance C 300 12 Collector-emitter voltage Gate-emitter voltage VGE 1000 300 100 Common emitter VGE = 0 V 30 f = 1 MHz Tc = 25C 10 0.1 1 Cres Coes 300 200 200 8 VCE = 100 V 100 4 10 100 1000 0 0 40 80 120 160 0 200 Collector-emitter voltage VCE (V) Gate charge QG (nC) tr, ton - RG 50 30 Common emitter VCC = 300 V VGE = 15 V IC = 40 A : Tc = 25C 50 30 Common emitter VCC = 300 V VGE = 15 V IC = 40 A tr, toff - RG : Tc = 25C : Tc = 125C (ms) 10 (ms) tr, toff Switching time : Tc = 125C 10 tr, ton 3 ton 1 tr 3 toff 1 tr 0.3 Switching time 0.3 0.1 1 3 10 30 100 300 1000 0.1 1 3 10 30 100 300 1000 Gate resistance RG (9) Gate resistance RG (9) tr, ton - IC 5 3 Common emitter VCC = 300 V VGE = 15 V RG = 56 W 5 : Tc = 25C 3 Common emitter VCC = 300 V VGE = 15 V RG = 56 W tf, toff - IC : Tc = 25C : Tc = 125C (ms) tr, ton 1 ton 0.5 0.3 tr tr, toff Switching time (ms) : Tc = 125C 1 toff 0.5 0.3 tf Switching time 0.1 1 3 5 10 30 50 100 0.1 1 3 5 10 30 50 100 Collector current IC (A) Collector current IC (A) 2000-12-22 6/7 MP7003 Rth (t) - tw (C/W) 10 Diode 3 IGBT 1 Thermal transient resistance Rth (t) 0.3 IGBT 0.1 Diode Tc = 25C 0.03 0.001 0.01 0.1 1 100 100 Pulse width tw (s) Safe Operating Area 300 100 *10 ms *100 ms 100 Reverse Bias SOA (A) 30 10 3 1 DC IC IC 60 DC operation Tc = 25C * Single nonrepetitive pulsed Tc = 25C *10 ms *500 ms *500 ms *1 ms Collector current Collector current (A) 80 40 Curves must be derated 0.3 linearly with increase in temperature. 0.1 0.1 0.3 1 3 10 30 100 300 1000 20 Tj < 125C = VGE = 15 V RG = 56 W 0 0 100 200 300 400 500 600 700 Collector-emitter voltage VCE (V) Collector-emitter voltage VCE (V) 2000-12-22 7/7 |
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